. How does the energy gap of an intrinsic semiconductor vary, when doped with a trivalent impurity?
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. How does the energy gap of an intrinsic semiconductor vary, when doped with a trivalent impurity?

. How does the energy gap of an intrinsic semiconductor vary, when doped with a trivalent impurity?
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. How does the energy gap of an intrinsic semiconductor vary, when doped with a trivalent impurity?
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An acceptor energy level is formed in the forbidden energy gap above the valence band when an intrinsic semiconductor is doped with a trivalent impurity. Due to this, electrons quickly jump to the acceptor energy level.

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An acceptor energy level is formed in the forbidden energy gap above the valence band when an intrinsic semiconductor is doped with a trivalent impurity. Due to this, electrons quickly jump to the acceptor energy level.
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